?guangdong hottech industrial co.,ltd e-mail:hkt@ heketai.com 1 / 4 HCN4401(npn) replacement type :2n4401 features ? power dissipation maximum ratings (t a =25c unless otherwise noted) electrical characteristics (t a =25c unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =100a, i e =0 60 v collector-emitter breakdown voltage v ceo i c =1ma, i b =0 40 v emitter-base breakdown voltage v ebo i e =100a , i c =0 6 v collector cut-off current i cbo v cb =35v , i e =0 0.1 ua emitter cut-off current i ebo v eb =5v , i c =0 0.1 ua dc current gain h fe(1) v ce =1v , i c =0.1ma 20 h fe(2) v ce =1v , i c =1ma 40 h fe(3) v ce =1v , i c =10ma 80 h fe(4) v ce =1v, i c =150ma 100 300 h fe(5) v ce =2v, i c = 500ma 40 collector-emitter saturation voltage v ce(sat)1 i c =150ma , i b =15ma 0.4 v v ce(sat)2 i c =500ma , i b =50ma 0.75 v base-emitter saturation voltage v be(sat)1 i c =150ma , i b =15ma 0.95 v v be(sat)2 i c =500ma , i b =50ma 1.2 v transition frequency f t v ce =10v,i c =20ma,f=100mhz 250 mhz collector output capacitance c ob v cb =10v,i e =0, f=100mhz 6.5 pf delay time t d v cc =30v, v be(off) =2v i c =150ma, i b 1=15ma 15 ns rise time t r 20 ns storage time t s v cc =30v, i c =150ma i b1 =-i b2 = 15ma 225 ns fall time t f 30 ns parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current-continuous i c 600 m a collector power dissipation p c 0.625 w junction temperature t j 150 c/ thermal resistance from junction t o ambient r ja 357 c/mw storage temperature t stg -55~+150 c to-92 1:emitter 2:base 3:collector switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HCN4401(npn) typical characteristics 0.2 0.4 0.6 0.8 1.0 1 10 100 0.1 1 10 100 10 100 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 1 10 100 0.4 0.6 0.8 1.0 0.1 1 10 1 10 100 100 1000 0123 0 50 100 150 200 250 1 10 100 10 100 1000 600 v cb / v eb c ob / c ib v be i c i c h fe t a =100 t a =25 30 3 common emitter v ce =1v collector current i c (ma) base-emitte r voltage v be (v) 3 s t at i c characteristic 600 t a =100 t a =25 common emitter v ce =1v 300 30 30 0.3 dc current gain h fe collector current i c (ma) f t p c t a collector po wer dissipation p c (mw) ambient temperature t a ( ) t a =100 t a =25 =10 600 30 3 base-emmitter sat uration voltage v besat (v) collector current i c (ma) 1 f=1mhz i e =0/i c =0 t a =25 cob cib 0.3 20 3 capacitance c (pf) reverse bias voltage v (v ) 10 300100 30 common emitter v ce =10v t a =25 transition freq uency f t (mhz) collector current i c (ma) common emitter t a =25 1.0ma 0.7ma 0.9ma 0.6ma 0.5ma 0.8ma 0.4ma 0.3ma 0.2ma i b =0.1ma collector current i c (ma) collector-emitter voltage v ce (v) i c t a =25 t a =100 =10 v besat v cesat i c i c 600 300 30 30 3 collector-emmitter saturation voltage v cesat (mv) collector current i c (ma) switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HCN4401(npn) symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 to-92 package outline dimensions symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 to-92 package outline dimensions switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HCN4401(npn) to-92 package tapeing dimension switching transistor
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